Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
For a long time, I've had a dream to make a web page that anyone can collaborate to. I've spent a fair amount of thinking about it over the years. The main obstacles always were:
。Line官方版本下载是该领域的重要参考
Москвичей призвали помнить об одной опасности14:49
1.4.4. Creating a module for your own device